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HIGH AND LOW SIDE DRIVER
I O +/-
? Independent low-side and high-side channels
?
1.0 A /1.0 A typ.
V OUT 10 V - 20 V
Data Sheet No.PD60221
IRS2011(S)PbF
Features
? Floating channel designed for bootstrap operation Product Summary
? Fully operational up to +200 V
? Tolerant to negative transient voltage, dV/dt immune V OFFSET 200 V max.
? Gate drive supply range from 10 V to 20 V
Input logic HIN/LIN active high
? Undervoltage lockout for both channels
? 3.3 V and 5 V input logic compatible
? CMOS Schmitt-triggered inputs with pull-down
? Matched propagation delay for both channels t on/off 60 ns typ.
? RoHS compliant
Delay Matching 20 ns max.
Applications
? Audio Class D amplifiers
? High power DC-DC SMPS converters
? DC motor drive
Description
The IRS2011 is a high power, high speed power MOSFET
driver with independent high and low-side referenced output
Packages
channels, ideal for Audio Class D and DC-DC converter appli-
cations. Logic inputs are compatible with standard CMOS or
IRS2011
8-Lead PDIP
IRS2011S
8-Lead SOIC
LSTTL output, down to 3.3 V logic. The output drivers feature a
high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are
matched to simplify use in high frequency applications. The floating channel can be used to drive an N-
channel power MOSFET in the high-side configuration which operates up to 200 V. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized monolithic construction.
Typical Connection
200 V
HIN
LIN
5
HIN
LIN
V S
HO
4
COM
8
COM
LO
V B
V CC
1
TO
LOAD
V CC
(Refer to Lead Assignments for correct configuration). This diagram shows electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
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